As a key member of power semiconductor devices, the Insulated Gate Bipolar Transistor (IGBT) is widely used in high-power and high-efficiency power electronic systems. IGBT combines the advantages of MOSFET and bipolar transistors, offering low conduction loss and high switching speed, making it a critical component in fields such as electric vehicles, renewable energy, and industrial equipment.
Its core advantages include high efficiency, strong reliability, and excellent performance in energy-saving and environmentally friendly applications. IGBT plays a pivotal role in the global energy transition and sustainable development, including motor control in electric vehicles, power conversion in renewable energy generation equipment such as solar and wind energy, and high-power applications like industrial motor drives, all of which are increasingly driving the rapid growth of the global semiconductor industry.
Outstanding innovation in the field of high-power semiconductor testing
Fuji Electric’s 7th Generation X-Series IGBT modules are widely used in industrial motor control and renewable energy generation, particularly in solar inverters and wind power systems. This series of IGBT modules significantly improves power conversion efficiency by reducing switching losses and parasitic inductance, meeting the demand for efficient energy management.
In addition, the High-Voltage IGBT (HVIGBT) Module Developed by Mitsubishi Electric is Specifically Designed for High-Power Applications such as Electric Vehicles and Rail Transit. Its primary features include increased power density, the ability to handle higher voltage and current, and a significant reduction in energy loss. This module plays a key role in the power transmission systems of electric vehicles by enabling more efficient power conversion, which enhances motor drive efficiency. Improved energy efficiency not only extends the vehicle’s range but also optimizes battery usage, reducing energy losses, and supporting the vehicle’s performance during long-distance travel.
Furthermore, as a technology leader in the semiconductor industry, Teradyne China Design Center participated in and led some design of an IGBT load board projects. The parasitic inductance of the critical test path in the design has very low parasitic inductance, which is significantly lower than traditional IGBT load board designs in the industry. The ultra-low parasitic inductance hardware interface board greatly improves the accuracy of IGBT test and sets the technical standard for future IGBT test and power conversion systems.
The project’s impact is felt in several ways.
First, by significantly reducing the parasitic inductance, the hardware interface board significantly improves the accuracy of the IGBT test, which provides technical support for the development of more efficient and reliable IGBT power devices.
Second, the test board designed by Teradyne China Design Center optimizes the performance of IGBT in electric vehicles, improving vehicle energy efficiency, charging speed and energy recovery capability. Finally, IGBT plays a vital role in renewable energy and smart grid applications, and the technological innovation of the project provides an effective solution for improving the efficiency of power conversion in systems such as solar and wind energy, contributing to the widespread adoption and development of renewable energy technologies.
These companies have demonstrated their technical expertise and innovation in the field of power semiconductor testing. This pioneering work not only advances IGBT technology but also lays a solid foundation for future developments in electric vehicles, renewable energy, and industrial applications. As global demand for efficient, energy-saving power conversion systems continues to grow, these high-tech companies will continue to lead technological innovation in the industry, driving a future of sustainable development.